物料参数
| Number of channels: | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 40 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.7 |
| Rail-to-rail: | In, Out |
| GBW (typ) (MHz): | 4.5 |
| Slew rate (typ) (V/µs): | 21 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.895 |
| Iq per channel (typ) (mA): | 0.56 |
| Vn at 1 kHz (typ) (nV√Hz): | 10.8 |
| Rating: | Space |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 0.3 |
| Features: | EMI Hardened, High Cload Drive, MUX Friendly, Small Size |
| CMRR (typ) (dB): | 130 |
| Iout (typ) (A): | 0.075 |
| Architecture: | CMOS |
| Radiation, TID (typ) (krad): | 30 |
| Radiation, SEL (MeV·cm2/mg): | 43 |
| Input common mode headroom (to negative supply) (typ) (V): | -0.01 |
| Input common mode headroom (to positive supply) (typ) (V): | 0.01 |
| Output swing headroom (to negative supply) (typ) (V): | 0.025 |
| Output swing headroom (to positive supply) (typ) (V): | -0.025 |
| Number of channels: | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 40 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 2.7 |
| Rail-to-rail: | In, Out |
| GBW (typ) (MHz): | 4.5 |
| Slew rate (typ) (V/µs): | 21 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.895 |
| Iq per channel (typ) (mA): | 0.56 |
| Vn at 1 kHz (typ) (nV√Hz): | 10.8 |
| Rating: | Space |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 0.3 |
| Features: | EMI Hardened, High Cload Drive, MUX Friendly, Small Size |
| CMRR (typ) (dB): | 130 |
| Iout (typ) (A): | 0.075 |
| Architecture: | CMOS |
| Radiation, TID (typ) (krad): | 30 |
| Radiation, SEL (MeV·cm2/mg): | 43 |
| Input common mode headroom (to negative supply) (typ) (V): | -0.01 |
| Input common mode headroom (to positive supply) (typ) (V): | 0.01 |
| Output swing headroom (to negative supply) (typ) (V): | 0.025 |
| Output swing headroom (to positive supply) (typ) (V): | -0.025 |
无库存
